Halide Segregation versus Interfacial Recombination in Bromide-Rich Wide-Gap Perovskite Solar Cells
Francisco Peña-Camargo a, Pietro Caprioglio a b, Fengshuo Zu b c, Emilio Gutierrez-Partida a, Christian M. Wolf a, Kai Brinkmann d, Steve Albrecht b, Thomas Riedl d, Norbert Koch b c, Dieter Neher a, Martin Stolterfoht a
a University of Potsdam, Institute of Physics and Astronomy, Karl-Liebknecht-Str 24-25, Potsdam, 14476, Germany
b Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Young Investigator Group Perovskite Tandem Solar Cells, Berlin, Germany
c Institut für Physik & IRIS Adlershof, Humboldt-Universitat zu Berlin, 12489 Berlín, Alemania, Berlín, Germany
d University of Wuppertal, Institute of Electronic Devices and Wuppertal Center for Smart Materials & Systems, 42119 Wuppertal, Alemania, Wuppertal, Germany
Materials for Sustainable Development Conference (MATSUS)
Proceedings of Online nanoGe Fall Meeting 20 (OnlineNFM20)
#PerFun20. Perovskite I: Solar Cells and Related Optoelectronics
Online, Spain, 2020 October 20th - 23rd
Organizers: Mónica Lira-Cantú and Mohammad Nazeeruddin
Contributed talk, Francisco Peña-Camargo, presentation 160
Publication date: 4th October 2020

Perovskites offer exciting opportunities to realize efficient multijunction photovoltaic devices. This requires high-VOC and often Br-rich perovskites, which currently suffer from halide segregation. Here, we study triple-cation perovskite cells over a wide bandgap range (∼1.5−1.9 eV). While all wide-gap cells (≥1.69 eV) experience rapid phase segregation under illumination, the electroluminescence spectra are less affected by this process. The measurements reveal a low radiative efficiency of the mixed halide phase which explains the VOC losses with increasing Br content. Photoluminescence measurements on nonsegregated partial cell stacks demonstrate that both transport layers (PTAA and C60) induce significant nonradiative interfacial recombination, especially in Br-rich (>30%) samples. Therefore, the presence of the segregated iodide-rich domains is not directly responsible for the VOC losses. Moreover, LiF can only improve the VOC of cells that are primarily limited by the n-interface (≤1.75 eV), resulting in 20% efficient 1.7 eV bandgap cells. However, a simultaneous optimization of the p-interface is necessary to further advance larger bandgap (≥1.75 eV) pin-type cells.

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