Proceedings of Online nanoGe Fall Meeting 20 (OnlineNFM20)
Publication date: 4th October 2020
Transient photoluminescence (tr-PL) measurements are among the most popular characterization techniques to monitor the charge-carrier dynamics and investigate recombination losses in halide perovskite layers and layer stacks.[1-3] In particular, it is imperative to better understand and characterize interfacial recombination losses that often limit device performance in finished perovskite solar cells. However, interpretation of PL transients on multilayer samples including interfaces is a complex endeavour due to the superposition of various transient effects that modulate the charge-carrier concentration in the perovskite layer and thereby the measured PL. These effects include bulk and interfacial recombination, charge transfer to electron or hole transport layers and capacitive charging or discharging.[4-6] The combination of these effects leads to substantial deviations from an exponential decay but is rather difficult to describe analytically. Hence, the state-of-the-art of interpretation of tr-PL decays of layer stacks or even full devices is currently still at an early stage. Data interpretation is often restricted to fitting one or several exponential functions to the decay to extract a “lifetime”. This approach causes a loss of information and impedes fully understanding and using the information contained in PL transients.
Here we combine numerical simulations with Sentauraus TCAD and experiments done over ~7 orders of magnitude in dynamic range on a variety of different sample geometries from perovskite films on glass to full devices to present an improved understanding of this method. We propose a presentation of the differential decay time of the tr-PL decay that follows from taking the derivative of the photoluminescence at every time.[7] Plotting this differential decay time as a function of the time-dependent quasi-Fermi level splitting enables us to distinguish between the different contributions of radiative and non-radiative recombination as well as charge extraction and capacitive effects to the decay.
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