Proceedings of Online nanoGe Fall Meeting 20 (OnlineNFM20)
Publication date: 4th October 2020
The recent progress in nanocrystal-based solar cell development is very encouraging and makes this kind of solar cell a promising candidate for next generation photovoltaics. However, understanding the factors that hinder further improvement of the solar cell performance are not trivial due to the complex interlinked parameters of the devices. Despite newly gained understanding of the underlying chemical and physical parameters, the improvements to the nanocrystal-based solar cells have been mostly trial-and-error based. In this work, we use a simulation tool based on 1D drift-diffusion to run full device simulations of simple Schottky as well as more complex heterojunction devices. By only using input parameters, which were either derived from measurements or large-scale ab initio simulations, and no additional fitted parameters, we are able to closely match the characteristics of measured devices. We use these simulations as a tool to understand the influence of interfaces, charge carrier mobility and trap-assisted recombination.
Our study demonstrates the ability to simulate nanocrystal-based solar cells, independent of device architecture and without relying on fitting. We can use this to systematically simulate improvements to devices and guide further development of nanocrystal-based solar cells.
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