The role of energetic disorder in free charge generation and recombination of Y6-based solar cells
Guangzheng Zuo a, Maojie Zhang b, Martijn Kemerink c, Dieter Neher a
a University of Potsdam, Institute of Physics and Astronomy, Karl-Liebknecht-Str 24-25, Potsdam, 14476, Germany
b Soochow University, Laboratory of Advanced Optoelectronic Materials, College of Chemistry, Wuzhong District, Suzhou, China, 215123, Suzhou, China
c Centre for Advanced Materials (CAM), Heidelberg University, Heidelberg, Germany
Materials for Sustainable Development Conference (MATSUS)
Proceedings of Online nanoGe Fall Meeting 20 (OnlineNFM20)
#NewOPV20. Non-fullerene Electron acceptors Within Organic Photovoltaics
Online, Spain, 2020 October 20th - 23rd
Organizers: Vida Engmann and Morten Madsen
Contributed talk, Guangzheng Zuo, presentation 181
Publication date: 4th October 2020

With the development of non-fullerene acceptors (NFAs), organic solar cells (OPV) recently have achieved efficiencies beyond 16 % in both single and double junction devices. Due to the disordered nature of organic semiconductors (OSCs), charge transport in OSCs is generally described by ‘hopping’ within an inhomogeneously broadened density of state distribution (DOS), where the energetic disorder plays a critical role. There are, however, conflicting views regarding the role of disorder on both the free charge generation and recombination. Problems in comparing and interpreting these results arise from the often ill-defined morphology of donor-acceptor systems. This asks for detailed experimental and theoretical studies regarding the role of disorder on the generation, extraction, and recombination of charge in well-defined OPV systems.

Here the efficient non-fullerene acceptor Y6 [1] was blended with different donor materials like PTB7Th, PM6, TQ1 and PCDTBT, chosen to cover a wide range in energetic disorder in the neat polymer film. To determine the energetic disorder for those material systems, the temperature dependent JV curves were measured based on both hole- and electron-only blend devices. Whereas the electron transport has almost constant disorder of around 65 meV for the different donor materials the energetic disorder for hole transport varies significnatly, from 65 to120 meV,. Charge transport and charge carrier dynamics was studied as a function of internal field, temperature, and excitation. TDCF results show that almost all 1:1 donor:Y6 blends exhibit field-independent charge generation, which we assign to the presence of an electrostatic interfacial field which for well-crystallized Y6 is large enough to compensate the Coulomb dissociation barrier [2]. To avoid the impact of blended morphologies, blends with a low concentration of the NFA (10 wt%) were studied, using the same set of donor materials with different energetic disorder. The results show that the energetic disorder has deteriorative effect on both free charge generation and recombination, consistent with the results of extensive kinetic Monte Carlo simulations.

Alexander von Humboldt Foundation

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