Effect of Positional Disorder ion Charge Transport in Nanocrystal Thin Films

Yunhua Xing^a, Nuri Yazdani^a, Weyde Lin^a, Vanessa Wood^a

^aETH Zurich, Materials and Device Engineering Group, D-ITET, Switzerland

Materials for Sustainable Development Conference (MATSUS)
Proceedings of Online nanoGe Fall Meeting 20 (OnlineNFM20)

#INfraNC20. Infrared Nanocrystals

Online, Spain, 2020 October 20th - 23rd

Organizers: Emmanuel Lhuillier and Philippe Guyot-Sionnest

Poster, Yunhua Xing, 234
Publication date: 4th October 2020

ePoster:

Understanding disorders in self-assembled nanocrystal (NC) solids is crucial for designing NC solids-based electronic devices. Compared to energetic disorder, the impact of positional disorder on charge carrier transport has not yet been clarified due to its diversity and complexity. Therefore, we seek to fill the knowledge gap by demonstrating an approach to systematically investigate positional disorder in NC solids. In this work, we demonstrated a systematic approach to study the effect of energetic and positional disorder both independently and correlatively on charge transport in NC-solids. Artificial NC superlattice configurations containing different types and amount of disorders are constructed, quantified and finally investigated by applying ToF simulations to extract effective mobility and to probe charge transport behavior at an “artificial atomic (NC)” level. The positional disorder induced by NC misalignment and porosity impact quite oppositely on carrier mobility. Mitigated impact can be observed in structures with site vacancies. Influence of energetic and positional disorder can be comparable individually, but the poorest charge transport happens when energetic disorder and positional disorder are correlated. Furthermore, within low field regime, disorders only affect charge hopping rate, while electric field only affects the tortuosity of transport path of the charge carriers. Overall, we address the overestimated negative effect of certain positional disorders and expect promising possibilities to study other positional disorders in NC solids, which helps to suggest what to prioritize in terms of synthesis and fabrication in the development of NC devices.

References:

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