Thin Silver Buffer Layer as Reactive Ion Scavenger for Interfacial Passivation of Perovskite Solar Cells
Cedric Gonzales a, Hakimeh Teymourinia a b, Juan Jesús Gallardo c, Masoud Salavati-Niasari b, Juan Bisquert a, Javier Navas c, Antonio Guerrero a
a Universitat Jaume I, Institute of Advanced Materials (INAM) - Spain, Avinguda de Vicent Sos Baynat, Castelló de la Plana, Spain
b Institute of Nano Science and Nano Technology, University of Kashan, Kashan, P. O. Box. 87317-51167, I. R. Iran
c Departamento de Química Física, Facultad de Ciencias, Universidad de Cádiz, E-11510 Puerto Real (Cádiz), Spain
Materials for Sustainable Development Conference (MATSUS)
Proceedings of Online nanoGe Fall Meeting 20 (OnlineNFM20)
#PerFun20. Perovskite I: Solar Cells and Related Optoelectronics
Online, Spain, 2020 October 20th - 23rd
Organizers: Mónica Lira-Cantú and Mohammad Nazeeruddin
Poster, Cedric Gonzales, 248
Publication date: 4th October 2020
ePoster: 

Hybrid organic inorganic perovskite materials have been gaining considerable attention due to their exceptional optoelectronic properties for in solar cell applications with certified power conversion efficiencies (PCE) approaching 25 % in less than 10 years. The rapid development in device performance is achieved by engineering the perovskite formulation and by improving the charge extraction at the contacts. However, lead halide perovskites suffer from uncontrolled ion migration and the interactions at the external contacts play a fundamental role in the hysteretic response and performance degradation kinetics1,2. In this work, we passivate the external interfaces by immobilizing migrating iodine ions with a thin Ag buffer layer placed between Spiro-OMeTAD/Au layers. Two configurations were investigated, (1) a reference FTO/compact-TiO2/meso-TiO2/MAPI/Spiro-OMeTAD/Au and (b) FTO/compact-TiO2/meso-TiO2/MAPI/Spiro-OMeTAD/Ag/Au. In the presence of an electrical field, iodine migration occurs and formation of AgI is irreversibly promoted. Devices containing a buffer layer of Ag show different dynamics for degradation as compared to reference devices with increased stability and hysteresis is totally suppressed. Sample preparation by unburying the reactive interface allows the analysis of the interface with the perovskite by XPS measurements. Finally, the kinetics of the layer formation is monitored by Impedance Spectroscopy in working devices allowing the identification of the resistive response of this layer. The present work represents a new approach to passivate the external interfaces in lead halide perovskites.

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