Publication date: 2nd November 2020
Perovskite solar cell fabrication using solution-based approaches is prone to appearance of pinholes and other defects, which reflect adversely on the device performance and stability.
The interfacial carrier recombination in perovskite solar cells (PSC) is one of the dominant efficiency loss mechanisms, which also results in the simultaneous loss of potential efficiency [1]. In order to achieve a stable long-term conversion of energy and a good performance of organometal halide perovskite solar cells, an interface passivation between perovskite and charge transporting materials is required. The insertion of polymeric interlayer permits to treat defects, suppress the current leakage and align energy level, maximizing the VOC of devices [2].
In this work we developed p-i-n PSC in planar configuration with polymer interlayer (PEO and PMMA) between perovskite (CH3HN3PbI3) and hole transporting layer (NiOx). We provided comparison of device performance fabricated on different concentrations of polymers interlayers to define the impact of thickness on output characteristics. Both kind of devices have hysteresis-free behavior which is related to the reduction interfacial defects. Maximum power point tracking (MPPT) shows satisfactory light stability of PSC with polymer interlayers in comparison with pristine perovskite solar cells for 180 hours of measurements under continuous light soaking (LED source, 1 Sun, 50°C) (figure 1).
PSC with PEO and PMMA interlayer exhibits a promising power conversion efficiency of 18.32 % and 18.02%, respectively which is higher than pristine PSC value of 17.89 %. At the same time, the light soaking analysis under the Sun simulator demonstrates the improved stability of PSCs fabricated with polymers (PEO and PMMA) which lost 20% of initial power conversion after 140 hours whereas in the sample without polymer treatment this lost is reached after 10 hours. Photovoltaic measurements (JV, TPV, charge extraction, dark JV, IPCE) confirmed that polymer passivation leads to lower concentration of defects at the interface
The authors gratefully acknowledge the financial support of the Ministry of Education and Science of the Russian Federation in the framework of Megagrant No. 074-02-2018-327.
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