Efficient Carrier Multiplication in Low Band Gap Mixed Sn/Pb Halide Perovskites
Sourav Maiti a, Silvia Ferro b, Deepika Poonia a, Bruno Ehrler b, Sachin Kinge c, Laurens D. A. Siebbeles a
a Delft University of Technology, The Netherlands, Julianalaan, 136, Delft, Netherlands
b Center for Nanophotonics, AMOLF, The Netherlands, Science Park, 104, Amsterdam, Netherlands
c Materials Research & Development, Toyota Motor Europe, Hoge Wei 33, Belgium
Proceedings of Online Conference on Perovskites for Energy Harvesting: From Fundamentals to Devices (PERENHAR)
Online, Spain, 2020 November 19th - 20th
Organizers: Dinesh Kabra, Sandheep Ravishankar, Angshuman Nag and Priya Mahadevan
Oral, Sourav Maiti, presentation 008
Publication date: 2nd November 2020

Absorption of an energetic photon in a semiconductor leads to generation of charge carriers with excess energy equal to the photon energy and the semiconductor band gap. Loss of this excess energy as heat is a major contribution to the efficiency limit of solar cells (~30% for Si solar cells). Carrier multiplication is a process of utilizing the excess energy to produce additional charge carriers. In this way a single photon can excite two or more electrons across the semiconductor band gap. This can boost the solar cell efficiency up to 40%. In this presentation, recent results on efficient carrier multiplication in mixed Sn/Pb halide perovskites (band gap 1.28 eV) will be discussed. The onset of carrier multiplication was close to twice the band gap with the number of charge carriers produced reaching 2 at 2.8 times the band gap. The results will be helpful to design efficient multi-excitonic perovskite solar cells.

This research received funding from The Netherlands Organisation for Scientific Research (NWO) in the framework of the Materials for sustainability and from the Ministry of Economic Affairs in the framework of the PPP allowance.

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