Publication date: 25th September 2020
The correct interpretation of capacitance data in perovskite solar cells is very important to obtain several fundamental parameters of the material, such as doping densities and built-in voltage values from Mott-Schottky plots or the spatial distribution of trap densities from capacitance-voltage (CV) measurements or drive-level capacitance profiling (DLCP). This has been difficult so far due to apparent ionic contributions to the spectra. However, I will show that even in a p-i-n perovskite solar cell devoid of mobile ions, the apparent Mott-Schottky profile is generated not by a space charge layer related to band bending but by charge injection and transitions between the geometric capacitances of the different layers of the perovskite solar cell. These effects also yield a fundamental minimum charge density that will be observed in spatial charge density profiles from capacitance measurements that should not be mistaken as defect/doping densities.
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