Resistive Switching in Ruddlesden–Popper Perovskites for Non-volatile Memories
Ankur Solanki a b, Antonio Guerrero c, Juan Bisquert c, Sum Tze Chien b
a School of Technology, Pandit Deendayal Petroleum University, Gandhinagar, Gujarat 382007, India
b NTU Singapore - Nanyang Technological University, Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Link, 21, Singapore, Singapore
c Universitat Jaume I, Institute of Advanced Materials (INAM) - Spain, Avinguda de Vicent Sos Baynat, Castelló de la Plana, Spain
Proceedings of International Conference on Impedance Spectroscopy and Related Techniques in Metal Halide Perovskites (PERIMPED)
Online, Spain, 2020 October 6th - 7th
Organizers: Juan Bisquert, Bruno Ehrler and Eline Hutter
Oral, Ankur Solanki, presentation 004
Publication date: 25th September 2020

Ruddlesden-Popper (RP) halide perovskites are the new kids on the block for high-performance perovskite photovoltaics with excellent ambient stability. The layered nature of these perovskites offers an exciting possibility of harnessing their optoelectronic properties for various applications. However, ion migration, one origin of current-voltage hysteresis in halide perovskites, unlocks new opportunities for resistive switching for different applications such as data storage, synaptic devices, neuromorphic electronics, logic gates, etc. Herein, we show the strong relationship between the resistive switching mechanism in random access memory (RAM) devices with the number of octahedral layers present in RP perovskites. The ON/OFF ratio of RP-based devices peaks at n̅ = 5, demonstrating the highest ON/OFF ratio of ∼104 and minimal operation voltage in 1.0 mm2 device. Long data retention even in 60% relative humidity and stable write/ erase capabilities exemplify their potential for memory applications. The in-depth impedance spectroscopy findings reveal formation of conducting silver iodide layer via chemical reaction between migrating ions and the external contacts and accumulation of iodine vacancies are the underlying cause to control the resistive switching. Furthermore, the absence of current-switching on replacement of Ag top electrode with chemically non-reactive Au validate our findings and confirm the necessity of the interfacial reaction.     

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