Perovskite Solar Cells: Stable under Space Conditions
Henk Bolink a, D. Pérez-del-Rey a, C. Dreessen a, A.M. Igual-Muñoz a, L. van den Hengel b, M.C. Gélvez-Rueda b, T.J. Savenije b, F.C. Grozema b, C. Zimmermann c
a Instituto de Ciencia Molecular, Universidad de Valencia, C/ Catedrático J. Beltrán 2, 46980 Paterna (Valencia), Spain.
b Department of Chemical Engineering, Delft University of Technology Van der Maasweg 9, Delft 2629 HZ, The Netherlands
c Solar Array Department Airbus DS Munich 81663, Germany
Proceedings of New Generation Photovoltaics for Space (PVSPACE)
Online, Spain, 2022 June 21st - 22nd
Organizers: Narges Yaghoobi Nia, Aldo Di Carlo, Luigi Schirone and Mahmoud Zendehdel
Invited Speaker, Henk Bolink, presentation 023
DOI: https://doi.org/10.29363/nanoge.pvspace.2022.023
Publication date: 8th June 2022

Metal halide perovskite solar cells (PSCs) are of interest for high altitude and space applications due to their lightweight and versatile form factor. However, their resilience toward the particle spectrum encountered in space is still of concern. For space cells, the effect of these particles is condensed into an equivalent 1 MeV electron fluence. The effect of high doses of 1 MeV e-beam radiation up to an accumulated fluence to 1016 e cm2 on methylammonium lead iodide perovskite thin films and solar cells is probed. By using substrate and encapsulation materials that are stable under the high energy e-beam radiation,<br /> its net effect on the perovskite film and solar cells can be studied. The quartz substrate-based PSCs are stable under the high doses of 1 MeV e-beam irradiation. Time-resolved microwave conductivity analysis on pristine and irradiated films indicates that there is a small reduction in the charge carrier diffusion length upon irradiation. Nevertheless, this diffusion length remains larger than the perovskite film thickness used in the solar cells, even for the highest accumulated fluence of 1016 e cm2. This demonstrates that PSCs are promising candidates for space applications.

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