Publication date: 9th October 2020
Recently, all-inorganic perovskite light-emitting diodes (PeLEDs) have attracted both academic and industrial interest thanks to their outstanding properties, such as high efficiency, bright luminance, and excellent color purity, low cost and potentially good operational stability. Both the design and treatment of all-inorganic emitters and the device engineering are two key strategies to guarantee the high performance. The major practical bottleneck relates to the labile surface chemistry of the perovskite materials, and in turn their stability. [1] Here, ultra-high stable CsPbI3 QDs for more than 15 months by controlling two main parameters, ligand concentration and temperature, have been synthetized. By increasing the capping ligand concentration during the QD synthesis, we were able to grow CsPbI3 in a broad range of temperatures. Improved photophysical properties of QDs are obtained by increasing the synthesis temperature. We achieved the maximum photoluminescence quantum yield (PLQY) of 93% for a synthesis conducted at 185 °C, establishing an efficient surface passivation, which decreases the density of non-radiative recombination sites. [2] Moreover, we show that it is possible to produce stable CsPbI3 QDs with high PLQY and red emission beyond the requirement of the Rec. 2020 standards for red color (0.708, 0.292). [3] By optimizing the hole transport layers and the electron transport layers (ETLs), in PeLEDs employing CsPbI3 quantum dots as an emitter layer, we achieved electron/hole current balance. The devises based on the architecture (ITO/PEDOT:PSS 8000-p-TPD/CsPbI3 QDs/ PO-T2T (40 nm)/Liq (2 nm)/Ag) show the highest external quantum efficiency (EQE) and are the most stable. [4] This result demonstrates how the device engineering is another significant factor to guarantee the high performance of LEDs, where a negligible charge injection barrier between charge injecting layers (CILs) and an optimized thickness of these CILs play a critical role for a controlled flow of charge carriers through the device and in turn for the performances.
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