Insight into a new passivation layer in the In2S3 sensitized TiO2 solar cells
Jun Zhu a, Linhua Hu a, Zhipeng Huo a, Songyuan Dai a
a Institute of Plasma Physics, Chinese Academy of Sciences, P.O.Box 1126, Hefei, Anhui, 230031, China, Hefei, 230031, China
Poster, Zhipeng Huo, 012
Publication date: 1st April 2013

In the majority of quantum dot sensitized solar cells (QDSSCs), the QD sensitizers employ toxic elements such as cadmium, lead, and arsenicet al and there is a practical need to develop low toxic QD sensitizers. β-In2S3 has been investigated as an inorganic semiconductor sensitizer in QDSSCs.[1-3] However, the best FF (46%) of these devices is still low. Furthermore the reported Voc is very modest as well therefore leading to a quite low energy conversion effiicency (much less than 1%).[3] In order to enchance the solar energy conversion efficiency,  the low Voc and FF have to be increased which is mainly due to recombination of i) electrons in TiO2 and hole in β-In2S3 and ii) electrons in TiO2 and the oxidised electrolyte. The strategy used in the conventional DSSC to retard the recombination is to insert an insulation layer bewteen TiO2 and dye, such as Al2O3 layer. In this paper, In2S3 sensitized TiO2 solar cells were prepared by the robust and low cost chemical bath deposition (CBD) methodology. A ZnS insulation layer was inserted between the In2S3 sensitized TiO2 photoanodes and electrolyte. Based on these results, a further modified QDSSC, composing of amorphous Y2O3 shell passivated the In2S3 sensitized TiO2 photoanodes was developed, which has not been reported.  Interestingly, both cells represent very high Voc and FF. More importantly, a 65% FF has been achieved on Y2O3 modified QDSSC, a highest value among the similar QDSSCs and the open circuit photovoltage Voc achieved is also 73% higher than the very recent reports.[1,2] 

(1) Hara, K.; Sayama, K.; Arakawa, H.; Semiconductor-sensitized solar cells based on nanocrystalline In2S3/In2O3 thin film electrodes. Solar Energy Materials and Solar Cells 2000, 62, 441. (2) Sarkar, S. K.; Kim, J. Y.; Goldstein, D. N.; Neale, N. R.; Zhu, K.; Elliott, C. M.; Frank, A. J.; George, S. M.; In2S3 Atomic Layer Deposition and Its Application as a Sensitizer on TiO2 Nanotube Arrays for Solar Energy Conversion. The Journal of Physical Chemistry C 2010, 114, 8032. (3) Gan, X.; Li, X.; Gao, X.; Qiu, J.; Zhuge, F.; TiO2 nanorod arrays functionalized with In2S3 shell layer by a low-cost route for solar energy conversion. Nanotechnology 2011, 22, 305601.
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