Publication date: 7th February 2022
Fabrication of DSSC solar cells using ZAZ as a TCO layer has been reported. Device with ZAZ shows low shunt resistance and higher series resistance and the PCE% is equivalent to that of FTO. The ZAZ 2 structure has shown maximum optical transparency of about 86.5% at around 508 nm with very low sheet resistance (5.3 Ω/□) and electrical resistivity (3.67×10-5 Ω.cm) and higher figure of merit (25.4 ×10-3 Ω-1 ). The prepared ZAZ samples shows work function tunability, which can be beneficial for solar cell applications as different types of solar cells demands different work function. Mobility enhancement for 10 nm Ag layer is due to the reduction of interface scattering as the Ag layer becomes continuous with increase in the thickness. The decrease in the sheet resistance of the structure is due to the increase in free carrier availability and higher mobility of the charge carriers with increased Ag layer thickness.
This research work was performed under the project “Strategic University Network to Revolutionise Indian Solar Energy (SUNRISE)”.