Publication date: 7th February 2022
This work illustrates the optimization of perovskite thin films via solution processing method using the non-stoichiometric precursor approach for optoelectronic applications. Various dislocations formed while the growth of thin films leads to high defect density and consequently results in charge carrier trapping via non-radiative channels. Here we deposited FA0.95Cs0.05PbI3 perovskite film with an energy band gap of 1.52eV using the non-stoichiometric route. The Cs+ source is typically CsCl and additional MAI is introduced into the precursor so to promote the topotactic growth and balance the stoichiometry. We observed accelerated nucleation with increasing MAI content in the film growth and improved optoelectronic properties.
This work was performed under the project “Strategic University Network to Revolutionize Indian Solar Energy (SUNRISE). We would also like to acknowledge Nanoscale Research Facility (NRF) and Centralized Research Facility (CRF) for the characterization support at IIT Delhi.
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