DOI: https://doi.org/10.29363/nanoge.sus-mhp.2022.001
Publication date: 15th November 2022
In this talk, we explore the origin of preferred doping levels in perovskite solar cells (PSCs), using drift-diffusion simulations, and present some experimental techniques for obtaining them in real devices. We show how, in general, n-i-p devices will tend to perform better with a p-doped perovskite, whereas in p-i-n devices an n-type perovskite is preferred. Based on this, certain methods, techniques and compositions may fundamentally limit the maximum achievable PCE for certain device configurations. For example, while originally high-performance perovskite-based tandem cells were made using a regular n-i-p configuration, they are now predominantly made using an inverted p-i-n structure meaning that the corresponding changes should be made to the perovskite absorber layer. Our findings also have implications for materials which have a tendency to self-doped, such as tin-based perovskites. The origin of the preferred doping levels is due to the high absorption coefficients and relatively short diffusion lengths of halide perovskites which can impede effective charge extraction at the front and back contacts. While we show that the location of the preferred doping level in PSCs is generically a function of device architecture in most real PSC devices, the carrier mobilities (which are a function of deposition conditions) also play an important role and can exasperate or counteract any problematic charge extraction due to the localisation, and transportation, of the photogenerated carriers.
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