Perovskite Light-emitting Diodes: A Bright Journey Full of Baffling Complexities
Rafael Sánchez Sánchez a, Alexis Villanueva-Antolí a, Iván Mora-Seró a, Juan Bisquert a
a Institute of Advanced Materials (INAM), Universitat Jaume I, Avinguda de Vicent Sos Baynat, s/n, Castelló de la Plana, Spain
Proceedings of Sustainable Metal-halide perovskites for photovoltaics, optoelectronics and photonics (Sus-MHP)
València, Spain, 2022 December 12th - 13th
Organizers: Teresa S. Ripolles and Hui-Seon Kim
Oral, Rafael Sánchez Sánchez, presentation 022
Publication date: 15th November 2022

Metal Halide Perovskite (MHP) semiconductors have emerged as very promising materials for photovoltaics, light-emitting diodes (LEDs) and other optoelectronic applications. Despite the outstanding performance levels that have been reported for MHP-based devices in the last years, which in many cases roughly graze the maximum theoretical efficiency limits, there is still a long way to go until reaching a complete understanding of the working principles and photo-electrochemical mechanisms involved in the charge carrier generation/recombination dynamics. Particularly problematic for the settlement of this technology towards market applications is the widely reported limited long-term stability of the devices. The strong ionic character of MHPs, as well as the ion mobility/migration and the gradual formation of crystalline defects upon exposing to light and/or to an external electric field, are factors that detrimentally contribute to achieve acceptable stability levels and aggravate the complexity behind the functioning of MHP-based devices. Upon careful optimization, we have prepared high-purity CsPbBr3 nanocrystals (NCs) and fabricated high-performing green light-emitting LEDs with luminance and efficiency values beyond 80000 Cd·m-2 and 20%, respectively. I will discuss about our recent results obtained upon the advanced characterization of the LEDs, through a series of steady-state and frequency-resolved techniques, that will unambiguously contribute to a deeper understanding of this exciting but intricate lighting technology. The identification of interfacial and bulk phenomena, as well as the impact of temperature and other relevant parameters on the light-generation, ion rearrangement and long-term stability of devices will be discussed in detail.

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