Publication date: 15th November 2022
Memristors are the simplest devices for emulating nerve cell synapses. They are simplified circuit elements that fuse memory and information processing based on changes in their internal resistance. There is a growing interest in this kind of device because it represents an alternative to avoid the constant movement of data between separate memory and processing units. The natural combination of memory and On-device computing is essential for developing bio-inspired computing systems that would increase the efficiency of applications such as artificial intelligence and machine learning [1][2]. Multiple organic and inorganic materials have been explored, just as used in the development of memristive structures, notwithstanding the need to (i) use high temperatures, (ii) control the operating voltages, and (iii) the stability of the devices are still critical challenges for the implementation of these technologies [3][4].
Metal-halide perovskites as active materials for memristors show promising results [5]. This family of materials presents outstanding optoelectronic properties and ambipolar ion-electron transport that are particularly desired for high-performance synaptic devices [6]. However, it will be essential to improve the interfaces and control the ionic mobility to develop reproducible, fast, and stable multi-state memristors.
In this work, we study the memristive behavior of a device based on CsPbBr3 quantum dots, evaluating the role of the metallic contacts and the device architecture in the activation and deactivation voltages and stability.
The author (TOC) graphic in part with DALL·E 2, OpenAI's image generator.
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