Publication date: 3rd July 2020
Beyond their use as light sources for displays, nanocrystals also appear as promising candidates to design low cost infrared sensors. In such devices the carrier density is a key parameter driving the signal-to-noise ratio. The carrier density can be controlled thanks to the gate in a field effect transistor configuration. Most common gates are SiO2 and electrolyte[1] which are respectively limited by their low capacitance and (only) room temperature operation. Here, we explore a high capacitance solid state gating from ionic glass (LaF3). The method is versatile and ca be applied PbS and HgTe NCs thin films with ionic glasses.[2] We show that by tuning the operating gate bias the signal to noise ratio can be improved by a factor of 100.
In a second step this high capacitance gate is coupled to graphene electrodes enabling (i) IR transparency, (ii) tunable work function of the contacts and (iii) propagation of the gate induced doping to the film thanks to the large quantum capacitance of graphene. We demonstrate the formation of a p-n junction improving charge extraction.[3] The latter enable operating condition which simultaneously maximizes the response and reduces the dark current enhancing the detectivity by two orders of magnitude.
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