Colloidal Gallium Nitride Quantum Dots and Impurity Doping for Tunable Blue Emission
Gahyeon Kim a, Yunchang Choi a, Juhee Son a, Kwang Seob Jeong a
a Korea University, Department of Chemistry, College of Science, 145 Anam-ro, Anam-dong, Seongbuk-gu, Seoul, Corea del Sur, Seoul, Korea, Republic of
Online Conference
Proceedings of Internet Conference for Quantum Dots (iCQD)
Online, Spain, 2020 July 14th - 17th
Organizers: Quinten Akkerman, Raffaella Buonsanti, Zeger Hens and Maksym Kovalenko
Poster, Gahyeon Kim, 073
Publication date: 3rd July 2020

Gallium nitride (GaN) semiconductor has attracted much attention due to its potential for optoelectronic devices. However, due to the harsh chemical reaction conditions such as high temperature, high pressure, and long reaction time, it has been a challenge to find a synthesis method for the GaN quantum dot under low temperature(<300˚C) Here, we present a new synthetic method for GaN colloidal quantum dots under the significantly lower temperature. Optical properties of the GaN quantum dot are changed by controlling the reaction conditions such as a blueshift of the bandgap transition wavelength arising from the quantum confinement effect. Interestingly, it was also observed that the photoluminescence spectrum shifts from ultraviolet to blue regime through zinc ion doping. To investigate the origin of the emission, time-resolved photoluminescence (TRPL) spectroscopy for the zinc-doped GaN CQDs was performed. This tunable emission of the GaN CQDs and the zinc-doped GaN CQDs will open a great opportunity for the optoelectronic applications.

This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, & Future Planning (NRF-2016R1C1B2013416) and by LG Display under the LGD-KU Incubation Program.

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