Ultrasensitive Quantum Dot - Field Effect Transistor Infrared Photodetectors
Gökhan Kara a, Matthias Grotevent a d, Dominik Bachmann a, Maksym Kovalenko c d, Michel Calame a b, Ivan Shorubalko a
a Empa – Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Transport at Nanoscale Interfaces, Dübendorf, Switzerland, Switzerland
b University of Basel, Department of Physics and Swiss Nanoscience Institute , Basel, Switzerland, Switzerland
c Laboratory for Thin Films and Photovoltaics, Empa – Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Switzerland, Überland Strasse, 129, Dübendorf, Switzerland
d ETH – Swiss Federal Institute of Technology Zürich, Department of Chemistry and Applied Biosciences, Laboratory of Inorganic Chemistry, Switzerland, Switzerland
Proceedings of Internet Conference for Quantum Dots (iCQD)
Online, Spain, 2020 July 14th - 17th
Organizers: Quinten Akkerman, Raffaella Buonsanti, Zeger Hens and Maksym Kovalenko
Poster, Gökhan Kara, 093
Publication date: 3rd July 2020

There is an increasing demand in infrared (IR) detection for chemical analysis, astronomy, medical sensors, or improved vision at night and under fog conditions. Yet, highly efficient IR detectors are expensive due to their complex fabrication. InGaAs detectors are currently dominating the short-wavelength IR regime, but are lacking CMOS integration for readout electronics.

A novel detector architecture based on colloidal quantum dots (QDs) and graphene field effect transistors provides a promising platform for the next-generation IR detectors. This new technology can not only be applied to Si/SiO2 but also to flexible substrates in general.

Although the proof of concept has already been demonstrated, many questions remain open: besides improving the figures-of-merit for IR detection efficiency, the reproducibility of fabricated devices should not be overlooked. Likewise, the detector is highly sensitive to its environment. We found an increased responsivity under vacuum, by a factor up to 1.5, compared to the device operation in ambient atmosphere.

The author thank FIRST-lab at ETH Zurich for access to their nanofabrication facilities and financial support by the Swiss National Science Foundation, project no. 182790.

© Fundació Scito
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