Publication date: 6th November 2020
We report for the first time the effect of a Cr-doped Cu2ZnSnS4 (CZTS) absorber layer on the performance of the CZTS thin film solar cells. Doped films were deposited on Soda-Lime glass substrates through a double step method that includes sulfurization of a sputtered stack of Zn–Cr/Sn/Cu metallic layers. Cr was introduced as a dopant in the Zn layer, and the electro-optical properties of the doped films were investigated as a function of the Cr concentration, showing a large absorption increase for wavelengths above 850 nm. Films with different Cr concentration have been used as absorber layers to investigate their effect on efficiency and performance of the solar cells. Solar cells characterization results show an efficiency increases from 1.86% to 3.96% in cell with 0.04% Cr concentration in the absorber layer. This 113% increase ratio is mainly due to enhancement of the current density assigned to a double step absorption of low energy photons and decrease in deep acceptor type defects. Empirical simulations show that this enhancement is also ascribable to the reduction of the acceptor-type defect density. These findings open the way to highly efficient CZTS solar cells.
The data reported in this paper were obtained at the Central Analytical Research Facility (CARF) operated by QUT’s Institute for Future Environments.
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