Proceedings of Perovskite Thin Film Photovoltaics (ABXPV16)
Publication date: 14th December 2015
Inorganic−organic perovskites displayed a remarkable boost in device efficiency within the last two years [1]. The establishment of stable and universal interface layers that provide charge selectivity and electrode functionality compatible with large scale processing is of great importance [2-3]. Especially the design of the solution processed back electrode is a major challenge due to the sensitivity of the perovskite layer on which the solution processed back electrode has to be formed. In this study, we show that low temperature processed aluminum doped zinc oxide (AZO) could serve as an efficient electron selective layer in inverted structured p-i-n perovskite based solar cells. Importantly, the back electrode functionality (AZO/Ag) is maintained even if the thickness of the AZO layer is over 200nm, suitable for the up scaling scenario of solution processed perovskite solar cells using roll-to-roll printing [4]. In addition, initial stability tests demonstrates that PCBM/AZO/Ag back electrodes are more stable compared to PCBM/Al when exposed in airwith no encapsulation barrier [5].[1] G. Hodes, Science, 342 (2013) 317.[2]A. Savva, S. Kennou, J. Nelson, D.D.C. Bradley, C.J. Brabec, S.A. Choulis et al, Advanced Energy Materials 3 (2013) 391.[3]A. Savva, S.A. Choulis, Applied Physics Letters, 102 (2013) 233301.[4] A. Savva, I.-C Burgués, G. Papazoglou, S. A. Choulis, ACS Applied Materials and Interfaces, in press. [5] A. Savva, I.-C Burgués, E. Gewrgiou, S.A. Choulis, Planar Perovskite-based Solar Cells Incorporating Doped Metal Oxides for the Back Electrode, under preparation.
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