High open – circuit voltatge of pure bromide perovskite solar cells using spiro-ometad as a hole-selective material
Clara Aranda a, Juan Bisquert a, Antonio Guerrero a
a Universitat Jaume I, Institute of Advanced Materials (INAM) - Spain, Avinguda de Vicent Sos Baynat, Castelló de la Plana, Spain
NIPHO
Proceedings of International Conference on Perovskite Thin Film Photovoltaics, Photonics and Optoelectronics (ABXPV18PEROPTO)
Perovskite Thin Film Photovoltaics (ABXPV18). 27-28 Feb
Rennes, France, 2018 February 27th - March 1st
Organizer: Jacky Even
Oral, Clara Aranda, presentation 070
DOI: https://doi.org/10.29363/nanoge.abxpvperopto.2018.070
Publication date: 11th December 2017

Perovskite solar cells based in bromide derivatives have potential high open-circuit voltage, due to their band gap value of 2.3 eV. This represents an important tool in the efforts for solar energy harvesting, both to function as high-energy photon absorber to improve utilization of the solar spectrum and drive electrochemical reactions.
With a facile route synthesis using MABr and PbBr 2 as unique precursors, with TiO 2 as electron selective material and Spiro-OMeTAD as hole selective material, we reported an unprecedented Voc of 1.6 V. The beneficial effect of having LiTFSI both in ESM and HSM, was studied as a function of the exposure to light and bias and was explained through the lithium ion migration. Having lithium ion at the mesoporous TiO2 leads to an improvement in the charge extraction as well as a faster photo-oxidation of Spiro-OMeTAD. Controlling the quality of the perovskite film and the extrinsic ion migration, it is possible to obtain a remarkably open-circuit voltage device with the simplest contacts and procedure. In addition, the semi-transparent absorber film with high Voc in the final device has great potential for further applications.

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