Publication date: 15th May 2025
Combining the remarkable semiconducting properties of metal halide semiconductors with synthetically tunable chirality produces a new family of chiral semiconductors that offer the ability to control spin at room temperature through the chirality-induced spin selectivity (CISS) effect. We have studied CISS in 2D chiral metal halide semiconductors (CMHS) where the chiral organic sub-component induces chirality into the two dimensional inorganic metal halide halides. We developed spin-valves that exhibit a room-temperature CISS-induced magnetoresistance (CISS-MR) of >300% and consists of a ferromagnet (FM), tunneling barrier, and CMHS. The large CISS-MR results from the formation of an interfacial spin-selective tunneling barrier due to CISS, which can produce spin-polarization and MR that surpass the limit generally assumed in the Jullière model. We also developed two non-contact ultrafast probe of CISS. One is through the inverse-CISS effect where by purely injected spin-current via ultrafast excitation of the FM induces a charge current in the CHMS. The charge current is read out by THz emission spectroscopy, which we show is sensitive to the charge current polarity and direction. The second involves induces an ultrafast charge current in a chiral metal and measuring picosecond spin-polarization. We will discuss the implications of these measurements on the CISS mechanism.
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