Effect of NiOx Properties as Hole Transport Layer on Lead Halide Perovskite Solar Cells
Masatoshi Yanagida a b, Md Bodiul Islam b, Namrata Pant b, Yasuhiro Shirai a, Kenjiro Miyano a
a National Institute for Materials Science(NIMS)
b University of Yamanashi
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics 2018 (AP-HOPV18)
Kitakyūshū-shi, Japan, 2018 January 28th - 30th
Organizers: Shuzi Hayase, Juan Bisquert and Hiroshi Segawa
Poster, Masatoshi Yanagida, 015
Publication date: 27th October 2017

PbI perovskite (PVK) solar cells have been improved upto 22% because the PVK has the large absorption coefficient ( ≈ 105 cm-1)  in the visible region and long carrier diffusion length (>1000 nm). We have investigated planar type PVK solar cells consisted of glass / tin doped indium oxide (ITO) /hole transport layer (HTL) / PVK / electron transport layer (ETL) /Ag or ITO to circumvent the complicated analysis of PVK in mesoporous strucutre, and to  produce the solar cells via lower temprature production processes. Recently, several HTM have been introduced into the solar cells to obtain probable device application. We have shown that the interface quality between PVK and HTL influences on the photovoltaic properties. We have also investigated on NiOx as HTL in the devices because of the high stability under continuous illumination of solar light. The fill factor of NiOx devices is lower than other HTL's one such as PEDOT:PSS or Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]. NiOx films have been preprared by sputtering methods, and contain not only Ni2+ but also Ni3+. The component of Ni2+and Ni3+ can be changed by the sputtering conditions. We discuss about the effect of NiOx properties on PVK solar cells.properties on PVK solar cells.

  

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