Interfacial Modification of Three-dimensional Heterojunctional Colloidal Quantum Dot Solar Cell
Xintong Zhang a, Yinglin Wang a, Shuaipu Zang a, Jinhuan Li a, Yichun Liu a
a Northeast Normal University
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics 2018 (AP-HOPV18)
Kitakyūshū-shi, Japan, 2018 January 28th - 30th
Organizers: Shuzi Hayase, Juan Bisquert and Hiroshi Segawa
Oral, Xintong Zhang, presentation 034
DOI: https://doi.org/10.29363/nanoge.ap-hopv.2018.034
Publication date: 27th October 2017

    Colloidal quantum dot solar cells (CQDSCs) have been considered as one of the promising photovoltaic devices due to their simple architecture, solution-processed fabrication and well match with the solar spectrum, however, they usually suffer from insufficient carrier diffusion length of quantum-dot film. Developing three-dimensional (3D) CQDSC with ZnO nanowire array could orthogonalize the direction of minority carrier transport with the direction of light absorption, hence, increase the thickness of QD layer for better light-harvesting without obvious decrease of the electron collection efficiency.

    However, the increased interfacial area in the 3D-structural CQDSCs is usually combined with the augment of interfacial charge recombination reactions. In addition, the unbalance among the light-harvesting, electron collection and hole collection processes also restricts the further efficiency improvement of the 3D-structural CQDSCs. Therefore, one of the key points for the performance improvement of 3D-structural CQDSCs is how to efficiently control different carrier-related processes. We modified the surface of ZnO NWs by an ultrathin Mg(OH)2 interfacial layer through a simple solution deposition method which could passivate the surface trap states of ZnO and block the interfacial charge recombination. Thus, this Mg(OH)2  interfacial layer could efficiently increase the photovoltage by 33% and power conversion efficiency (PCE) by 25% compared with the reference cell. Except for the ZnO/PbS interface, we also paid attention to the mismatch band alignment between PbS and Au, which generated a reverse Schottky barrier and blocked the hole collection at PbS/Au interface. An Al2O3 ultrathin layer was atomic layer deposited on PbS-EDT film to increase the work function of PbS film by passivating the trap states of PbS, subsequently reduce the reverse Schottky barrier at PbS/Au interface. As a result, the PCE of CQDSCs with Al2O3 (7.3%) is increased by 31.5% compared with reference cell.

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