Publication date: 17th July 2025
Chemically synthesized metal halide perovskite thin films and nanocrystals have emerged as a new class of efficient light emitting materials which are particularly interesting for development of light-emitting diodes (LEDs). Stability of perovskite-based LEDs is still an issue, which can be mitigated by choosing proper light-emitting layer, electron transport layer (ETL), and the interface design [1], as we demonstrated recently for FAPbBr3 perovskite films with ultralow trap density in combination with ZnO ETL [2]. This design led to green perovskite light-emitting diodes with a brightness of ~312,000 cd m−2, a half-lifetime of 350 h at 1,000 cd m−2, and a power conversion efficiency of 15.6% at a current density of 300 mA cm−2. As for many other nanocrystals, proper surface passivation is a key to ensure high colloidal stability and processability of perovskites, which can be achieved by choosing bidentate Lewis base ligands [3]. To avoid the use of toxic lead, CsSnI3 perovskites can be implemented for efficient and rather stable near-infrared LEDs. The use of multifunctional hesperetin additive alongside the perovskite precursors allowed us to modulate the crystallization kinetics and inhibit the oxidation process of tin-based perovskite films. We demonstrated near-infrared CsSnI3 perovskite LEDs with a peak at 948 nm, an external quantum efficiency of 4.7%, and a half-time of operation of over 11 h.
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