Publication date: 8th July 2026
Photo-chargeable supercapacitors integrate light harvesting and energy storage into a single device, making them promising candidates for next-generation smart energy systems. Herein, a symmetrical infrared (IR) light-responsive supercapacitor was fabricated by depositing two-dimensional (2D) reduced graphene oxide (rGO) sheets followed by indium arsenide (InAs) quantum dots (QDs) on both rigid and flexible substrates. Under IR illumination, the InAs QDs/2D rGO composite framework exhibited a remarkable three-fold enhancement in areal capacitance. The synergistic interaction between photo-generated charge carriers in the InAs QD layer and the intrinsic capacitive behavior of the rGO sheets significantly enhances the electrochemical performance under illumination while maintaining excellent stability under ambient conditions. Notably, nearly 50% of the photo-induced capacitance enhancement was retained after 3000 charge–discharge cycles, demonstrating the durable photoactive behavior of the InAs QDs/2D rGO heterointerface. When implemented on flexible substrates, the device exhibited approximately 97% capacitance retention under repeated mechanical bending. Electrochemical and impedance spectroscopy analyses revealed that surface-controlled charge storage at the electrode/electrolyte interface dominates under dark conditions, whereas photo-induced charge storage under IR illumination is governed predominantly by diffusion-controlled processes. These results demonstrate that the InAs QDs/2D rGO heterointerface combines high electrochemical performance with excellent mechanical and cycling stability, highlighting its strong potential for integration into next-generation wearable devices powered by IR and ambient white light.
The authors gratefully acknowledge the financial support provided by the Marie Skłodowska-Curie Actions (MSCA) Postdoctoral Fellowship under the Horizon Europe Programme of the European Union. The authors also acknowledge the Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, and The Hebrew University of Jerusalem for their additional scientific and institutional support.
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