Fullerene Imposed High Open-Circuit Voltaje in Efficient Perovskite Based Solar Cells
Henk.J Bolink a, Michele Sessolo a, Cristina Momblona a, Lidon Gil a
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV16)
Swansea, United Kingdom, 2016 June 29th - July 1st
Organizers: James Durrant, Henry Snaith and David Worsley
Poster, Lidon Gil, 078
Publication date: 28th March 2016

Organametal halide perovskites have recently attracted much interest in photovoltaic application because of their impressive performance, now exceeding 21%. Several methods have been reported in order to deposit the perovskite layer; one of them is the physical vapour deposition technique, which presents some advantages over solution-based methods. In general, two main device architectures have been used to fabricate perovskite solar cells, n-i-p and p-i-n. In the p-i-n configuration the perovskite is created on top of transparent substrates covered with a hole transport layer. The ETL materials used in this configuration are mostly fullerene derivatives. The PCBM is the most used fullerene, although its room temperature solubility in aromatic solvent is limited, limiting the achievable layer thickness. In this work, five different commercially available fullerenes are evaluated as the hole blocking/electron transporting materials in the p-i-n perovskite solar cells employing polyTPD as the electron blocking layer with a vaccum deposited perovskite absorber layer. The fullerenes are members of two distinct families;[6,6]-phenyl-C61-butyric acid with methyl (PCBM), butyl (PCBH), hexyl ester (PCBB) and indene-C60-propionic acid butyl ester and hexyl ester (IPB and IPH, respectively). Improved processing and high power conversion efficiencies were obtained ranging from 13% to 14,6% depending on the particular fullerene employed. Hence, a significant enhancement of the solar cell performance can be obtained by selecting the suitable fullerene derivative.



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