Transport regimes in lateral metal-perovskite-metal device structures
N Ganesh a, A. Z. Ashar a, Sumukh Purohit a, K.L. Narasimhan b, K.S. Narayan a
a Chemistry and Physics of Material Unit (CPMU), Jawaharlal Nehru Center for Advanced Scientific Research, Jakkur, Jakkur, Bengaluru, Karnataka, India, Bengaluru, India
b Center for Nanoscience and Engineering (CENSE), Indian Institute of Science, Bengaluru - 560012
International Conference on Hybrid and Organic Photovoltaics
Proceedings of 13th Conference on Hybrid and Organic Photovoltaics (HOPV21)
Online, Spain, 2021 May 24th - 28th
Organizers: Marina Freitag, Feng Gao and Sam Stranks
Oral, N Ganesh, presentation 090
Publication date: 11th May 2021

The high performance of hybrid perovskite based devices is attributed to its excellent bulk-transport properties. However, carrier dynamics at the metal-perovskite interface and its influence on device operation is not widely understood. Here we explore dominant transport mechanisms in methyl ammonium lead iodide (MAPbI3) perovskite based asymmetric metal-electrode lateral devices, with inter-electrode length varying from 4 μm to 120 μm. The device operation characteristics indicate distinct transport signatures in the ohmic and space-charge limited current (SCLC) regimes, which were observed to be dependent on inter-electrode length and applied bias. Further, the influence of charge carrier dynamics at the metal-perovskite interface were understood using spatially resolved Kelvin probe microscopy. The potential mapping across the device indicates minimal ion-screening effects and the presence of a transport barrier at the metal-MAPbI3 interface. Additionally, the effects of photo-excitation, studied using near-field scanning photocurrent microscopy show dominant recombination and charge-separation zones in the lateral devices. This spatially resolved photocurrent tends to a uniformly distributed profile in the case of short channel devices. This trend correlates with bulk light response in a short channel length (4 um) device, which exhibits a responsivity of ~ 6 A/W at 5 V bias. Owing to the low device capacitance, the transient photocurrent indicates a fast response component of ~11 ns, which allows for high speed operational applications.

The authors acknowledge support from EPSRC project ‘Strategic University Network to Revolutionize Indian Solar Energy-SUNRISE (EP/P032591/1)’.

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