Different Strategies for Engineering of Halide Perovskite Interfaces
Iván Mora-Seró a
a Universitat Jaume I, Institute of Advanced Materials (INAM) - Spain, Avinguda de Vicent Sos Baynat, Castelló de la Plana, Spain
Proceedings of Interfaces in Organic and Hybrid Thin-Film Optoelectronics (INFORM)
València, Spain, 2019 March 5th - 7th
Organizers: Natalie Stingelin, Henk Bolink and Michele Sessolo
Oral, Iván Mora-Seró, presentation 024
DOI: https://doi.org/10.29363/nanoge.inform.2019.024
Publication date: 8th January 2019

Halide perovskite are receiving a huge attention in the recent few years. Undoubtedly this attention is mainly due to the outstanding power conversion efficiencies, surpassing 23%, reported for photovoltaic devices, fabricated with polycrystalline films from low cost techniques. This high performance is due to the high potentiality of the halide perovskite material but in order to take full advantage of it proper selective contacts have to be developed. The possibility of low temperature and solution process make that this technology can be easily integrated with very different kinds of materials and the interface properties can be tailored with a broad range of possibilities, including organic and inorganic materials and nanoparticles. In this talk we show how systems with very different nature can be used to engineering the perovskite interface in perovskite optoelectronic devices. The different systems have been systematically characterized in order to determine in which way interface modifications affect their ultimate performance.

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