DOI: https://doi.org/10.29363/nanoge.inform.2019.049
Publication date: 8th January 2019
Fabrication of the devices from solvents is the essence of future printed electronics which embodies easy processability, low cost and flexibility. One particularly interesting device is Light Emitting Field Effect Transistor (LET), as it integrates both the switching and emitting property in a single optoelectronic device, which can significantly simplify the design of active matrix displays.[1] Moreover, as the emission zone is relatively small, LET can act as future nano light sources.[2] More importantly, LET can render very high current density,[3] a prospective for realizing electrically pumped lasers which still remains as one of the biggest challenges in flexible electronics.
One of the major issues in achieving high performance LET is obtaining both high carrier mobility and high electroluminescence from the active semiconducting layer, requiring complex device engineering. Here in this work, we present a number of approaches that were applied to decrease optical switch on voltage in hybrid LETs. Firstly, solution processed indium oxide (In2O3) was used as electron transport layer to achieve high current density. Interlayer tungsten polyoxometalate (POM) between the indium oxide and the source-drain electrodes improved the overall performance of the device. Electron mobility reached 11 cm2/Vs, which is 3 times higher than that of the control device. Current on/off ratio increases by 2 orders of magnitude reaching 107.[4] Subsequently, organic emissive layer (Super Yellow) was introduced, and light emission visible for naked eye was observed using asymmetric source/drain electrodes. In the next step, p-channel organic transport layer (C8-BTBT) was further integrated after improving hole injection. For that, various metal and oxide combinations were applied to determine the optimum hole injection electrode. Finally, we applied hole transport layer and emissive layer blend approach, which considerably decreased the optical switch on voltage as well as enhanced the luminance.
The project is supported by Aquitaine regional grant "SMOLED" (2014-1R60306). A. Ablat gratefully acknowledges financial support of the National Natural Science Foundation of China (Grant No. 61604126, 61464010) and China Scholarship Council (CSC).
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