Standardization of Measurement Protocols for Photovoltaic Devices Exhibiting Complex Current Response to Applied Voltage
Shinichi Magaino a, Hidenori Saito a, Daisuke Aoki a, Tomoyuki Tobe a
a Kanagawa Institute of Industrial Science and Technology (KISTEC), Kawasaki, Japan, 3-2-1 Sakado, Takatsu-ku, Kawasaki, Japan
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP20)
Tsukuba-shi, Japan, 2020 January 20th - 22nd
Organizers: Michio Kondo and Takurou Murakami
Oral, Shinichi Magaino, presentation 005
Publication date: 14th October 2019

For years, considerable research effort worldwide has been invested in the development of new thin-film photovoltaic (PV) technologies that may offer lower cost production, new applications or both [1]. At present dye-sensitized solar cells (DSC) have been on the market, and in the case of perovskite solar cells (PSC), a number of companies and research centres are devoted to technology transfer from laboratory to market, working on device stability and reliability, up-scaling and compatibility of the cell manufacturing with industrial process, such as roll-to-roll deposition [2]. However, there are considerable difficulties associated with reliable measurement of power conversion efficiency for some kinds of DSC and PSC that are a serious concern for technology transfer from laboratory to market. Although the measurement procedures described in the IEC 60904 series and IEC 60891 are highly effective for “well-behaved” devices, such as most wafer-based silicon solar cells, these standards lack sufficient direction to address the complex challenges presented by these devices [3]. As a consequence, these devices need some additional measurement challenges that are at present not dealt with in these standards. In this paper we present what additional measures may be needed for accurate determination of the power conversion efficiency, and how these measures might be done for the devices exhibiting complex current response to applied voltage.

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