Non-Volatile Photomemory with a Ultrafast and Multi-Level Memory Behavior
Jung-Yao Chen a
a National Chung Cheng University, TW, Chiayi County, Taiwán, Chiayi, Taiwan, Republic of China
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP20)
Tsukuba-shi, Japan, 2020 January 20th - 22nd
Organizers: Michio Kondo and Takurou Murakami
Invited Speaker Session, Jung-Yao Chen, presentation 014
Publication date: 14th October 2019

Light Fidelity (Li-Fi) have been show the next-generation communication system with the features of high security, high speed and low interference. It is of great urgency to exploration of corresponding devices such as light-emitting diodes (LEDs), image sensors, opto-couplers, photodiodes, microcontrollers and non-volatile flash photomemory. Among the plethora of derivatives in optical wireless communications, non-volatile flash photomemory is of particular interest since it is the essential building block of computation technology for nowadays big database storage device with ultrafast programming rate. Herein, versatile photoactive material with exotic photo-physic properties have been utilized as floating gate to develop the ultrafast responsive non-volatile flash photomemory. Time-resolved photoluminescence and cryogenic photoluminescence have been revealed the fact that the charge transfer rate between photoactive layer and active channel. Through the delicate material selection and morphology manipulation, the devices possess wavelength/power/illumination time-distinguishable multilevel behavior within very short photo-programming time down to~ 1 ms. The ultrafast programming time of non-volatile photomemory trigger the realization of Li-Fi in the near future.

The authors thank the financial supports from the Ministry of Science and Technology in Taiwan (107-2636-E-194-001- and 108-2636-E-194-001-).

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