Highly Efficient Near-Infrared Luminescence of Yb(III) doped Perovskite Thin Films for Light-Emitting Device Applications
Ayumi Ishii a, Tsutomu Miyasaka a
a Graduate School of Engineering, Toin University of Yokohama, Kurogane-cho 1614, Aoba-ku, Yokohama, 225-8503
Oral, Ayumi Ishii, presentation 017
DOI: https://doi.org/10.29363/nanoge.iperop.2020.017
Publication date: 14th October 2019

Near-infrared (NIR) light emitting diodes (LEDs) are useful in a wide range of applications including night-vision devices, optical communication, biomedical imaging and medical treatments. The NIR emitters like organic compounds and colloidal quantum dots (QDs) have been widely investigated. However, their less charge transport ability and luminescence efficiency limit the improvement of external quantum efficiency (EQE) in NIR LEDs, which is still far from practical application. As compared with QDs or organic semiconductor based LEDs, the film-based structure with high carrier mobility, such as lead halide perovskites, enhances radiative recombination by minimizing charge trapping losses, resulting in higher EQE value in LEDs. Lead halide perovskites also exhibit significant potential for applications in LEDs because of their high color purity and a narrow full-width at half-maximum (FWHM) over the entire visible light spectrum, as well as their low-cost solution processing without high temperature treatments, however, pure lead based perovskite LEDs only emit below 800 nm. In this report, we present a new approach for developing highly efficient NIR LEDs based on an energy transfer system composed of all inorganic perovskite (CsPbCl3) film as an energy donor and ytterbium ions (Yb3+) as an acceptor. The NIR emission of Yb ion at around 1000 nm is found to be sensitized by CsPbCl3 in a thin film structure with a photoluminescence quantum yield over 60%. The Yb3+:CsPbCl3 based LEDs also exhibit a bright electroluminescence around 1000 nm with the highest EQE (~6.0%) ever reported for NIR LEDs capable of emission beyond 900 nm, which was achieved by high carrier transporting ability and effective sensitized emission property in the solid-film structure.  

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