Evaluation of interface junction capacitance of perovskite solar cells by direct current measurement
Satoshi Uchida a, Ludmila Cojocaru b, Hiromi Tobita a, Viraji Jayaweera c, Shoji Kaneko c, Hiroshi Segawa a
a Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Japan
b University of Freiburg, Germany, Germany
c SPD Laboratory, Inc., Johoku 2-35-1, Naka-ku, Hamamatsu 432-8011, Japan
Oral, Satoshi Uchida, presentation 029
DOI: https://doi.org/10.29363/nanoge.iperop.2020.029
Publication date: 14th October 2019

The capacitance inside the perovskite solar cell device is crucial factor related with the hysteresis in I-V curve[1]. Nevertheless the understanding of capacitance is still not yet well understood because the conventional impedance analysts is a function of evaluation frequency and can not separate the charge / discharge current (capacitance) specially under the illumination condition.

Here in this study, we newly measured the internal capacitance of perovskite solar cell by using stepped light-induced transient measurements of photocurrent and voltage (SLIM–PCV) together with conventional inductance-capacitance-resistance (LCR) meter as a reference. By the SLIM-PCV measurement, we have seen a general trend of capacitance against the light intensity, that can be easily observed in the silicon solar cells. The perovskite solar cells measured by using the LCR-meter under 100 mW·cm-2 irradiation condition provides the huge capacitance values as a function of frequencies that is already reported in several literatures. The EBIC analysis is interesting and back supported the charge accumulation behavior at CH3NH3PbI3/TiO2 interface. We will discuss about this technique to correlate with the device durability by monitoring the capacitance.

Figure 1: Capacitance measurement for perovskite solar cell using LCR meter under the dark and 100 mW·cm-2 conditions

The author thanks for financial support from New Energy and Industrial Technology Development Organization (NEDO, Japan).

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