Mitigation of the Recombination Activities with Rubidium incorporation for Efficient and Stable FASnI3 Solar Cells
Dhruba B. Khadka a b, Yasuhiro Shirai b, Masatoshi Yanagida b, Kenjiro Miyano b
a International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
b Global Research Center for Environment and Energy based on Nanomaterials Science (GREEN), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Poster, Dhruba B. Khadka, 062
Publication date: 14th October 2019

Although the device performance of Pb-HaPSCs exceeded the power conversion efficiency (PCE) of 25 %, the toxic Pb has to be replaced for commercialization. A number of non- toxic candidates such as Sn, Ge, Bi, and Sb based halide perovskites, etc. have been explored as Pb free HaPSCs.[1,2] Among these alternatives, Sn-based halide perovskites (Sn-HaP), a close cousin to Pb-HaP, are promising alternatives.[1,3] The oxidative instability of tin-based halide perovskite (Sn-HaP) deteriorates the device performance. In this report, we have explored the role of Rb insertion in FASnI3 lattice for device performance. The Rb incorporation in crystal lattice facilitates uniform morphology with better crystal quality and suppression of oxidation of Sn2+. This leads the improvement in device with the power conversion efficiency of ~3 % for pure FASnI3 to 6 % for Rb incorporated FASnI3.  It is also benefited from a higher diffusion potential and mitigation of defect activities with RbCl additive in Sn-HaPSCs.

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