Silicon-Based Quantum Dot-Assisted Photoelectric Effect in Perovskite Solar Cells
Ying-Chiao Wang a, Kazuhito Tsukagoshi b
a International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba,, Ibaraki, Japan
b WPI International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
Poster, Ying-Chiao Wang, 063
Publication date: 14th October 2019

Further boosting power conversion efficiencies (PCEs) of perovskite solar cells (PSCs) without excessively increasing production expenses is critical to practical applications.[1] Here, we introduce silicon quantum dots (SiQDs) to assist perovskites to harvest additional sunlight without changing PSC processes. These SiQDs could convert shorter wavelength excitation light (300-530 nm) into visible region, and meanwhile could reflect longer wavelength perovskite-unabsorbed visible light (550-800 nm), leading to broadband light absorption enhancement in PSCs. As a result, SiQD-based photocurrent gainers could improve external quantum efficiencies of PSCs over a wide wavelength range of 360-760 nm, yielding the relative enhanced short-circuit current density (+1.66 mA/cm2) and PCE (+1.4%). Surprisingly, even the PSC with low purity perovskites shows an ultra-high PCE improvement of 5.6% up. Our findings demonstrate QD-assisted effects incorporating earth-abundant and environmentally-friendly silicon bring effective optical management that remarkably promote performances of PSCs and enable address their substantial balance of costs.

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