Surface Modified NiOx Nanoparticles as Hole Transport Materials in n-i-p Structured Perovskite Solar Cells
Ryuji Kaneko a b c, Joe Otsuki a, Md. Khaja Nazeeruddin b, Ashraful Islam c
a College of Science and Technology, Nihon University
b Group for Molecular Engineering of Functional Materials, Institute of Chemical Sciences and Engineering, EPFL, Switzerland, Switzerland
c National Institute for Materials Science (NIMS), Center for Green Research on Energy and Environmental Materials, Photovoltaic Materials Group, Japan, Japan
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP20)
Tsukuba-shi, Japan, 2020 January 20th - 22nd
Organizers: Michio Kondo and Takurou Murakami
Poster, Ryuji Kaneko, 073
Publication date: 14th October 2019

Development of hole transport materials (HTMs) with chemical and thermal stability and high hole mobility is still one of the challenges to improve the device stability and power conversion efficiency for perovskite solar cells (PSCs). Instead of the organic semiconductors such as spiro-OMeTAD and PTAA, inorganic semiconductors as HTMs were developed due to their high chemical and thermal stability and high hole mobility. Despite of these advantages of inorganic HTMs, the inorganic HTMs in n-i-p structured PSCs were limited. In this presentation, we developed surface-modified NiOx nanoparticles as HTMs in n-i-p structured PSCs.[1] The well-dispersed NiOx dispersion in chlorobenzene with a hexanoic acid as a surfactant was prepared. A high-quality NiOx thin film was deposited on top of the perovskite layer by spin-coating of the NiOx dispersion. The modified NiOx film has superior conductivity (1.20 x 10-5 S cm-2) than that of doped spiro-OMeTAD, which has a potential for efficient HTMs in PSCs. The modified NiOx film shows better hole extraction properties than the pristine NiOx film. The modified NiOx nanoparticles formed closely packed and pinhole-free films, resulting in improvement of the device performance with a power conversion efficiency from 5.5% to13.1%. We propose that the surface modification is applicable to the development of charge transport materials based on metal oxide nanoparticles in PSCs.

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