RF Sputtered NiOx as Hole Transport Layer for CH3NH3PbI3 Perovskite Solar Cell
Masatoshi Yanagida a b, Namrata Pant b, Yasuhiro Shirai a, Kenjiro Miyano a
a Center for Green Research on Energy and Enviroment Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
b Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511, Japan
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP20)
Tsukuba-shi, Japan, 2020 January 20th - 22nd
Organizers: Michio Kondo and Takurou Murakami
Poster, Masatoshi Yanagida, 077
Publication date: 14th October 2019

Radio-frequency (RF) sputtered NiOx as hole transport layer contributes the high stability of CH3NH3PbI3 perovskite (PVK) solar cells. 1-4 We sputtered NiOx films by using NiO as the sputtering target. The property of NiOx films depends on the sputtering conditions such as Ar gas pressure, the sputtering power, and so on.2,3 The Ar pressure influences on the transmittance of NiOx in the visible and near-IR region. From XPS results, the amount of Ni3+ or OH groups on the surface influences on the photovoltaic properties of PVK solar cells.2,3 Recently, we also showed the NiOx influenced on the film growth of PVK, especially for the growth of PbI2 crystal in PVK. We comprehensively report the properties of RF sputtered NiOx as hole transport layer fore PVK solar cells.

 

 

 

  

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