Solution-Processed Aluminum-Doped Nickel Oxide Hole Collectors for Highly Efficient Planar Perovskite Solar Cells
Bhaskar Parida a, Seojun Lee a, Saemon Yoon a, Jun Ryu a, Dong-Won Kang a
a School of Energy Systems Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics (IPEROP20)
Tsukuba-shi, Japan, 2020 January 20th - 22nd
Organizers: Michio Kondo and Takurou Murakami
Poster, Bhaskar Parida, 098
Publication date: 14th October 2019

Recently, the power conversion efficiency of perovskite solar cells has been significantly improved over 25% which is comparable to that of Si solar cells. Among different device structures, including mesoporous and planar structures, inverted planar perovskite solar cells structure has attracted considerable attention due to its simple, low-temperature fabrication process, and mostly low hysteresis. However, the conversion efficiency of most NiOx based inverted planar perovskite solar cells is limited below 20% due to the insufficient electronic conductivity of NiOx.

In this work, solution-processed Al-doped NiOx hole collectors were developed for the fabrication of inverted planar perovskite solar cells with device structure (ITO/Al-NiOx/MAPbI3/PCBM/Am-TiOx/Ag). We observed that Al-doped NiOx dramatically improved the electrical conductivity of NiOx, which enhanced the hole extraction/transportation by reducing the contact resistance and carrier recombination losses at the NiOx-perovskite interface. Furthermore, the Al-doped NiOx films significantly controlled the crystal growth and improved the crystallinity of the perovskite film with reduced energetic disorders because of their high smooth surface. The devices with Al-doped NiOx hole collectors showed a higher efficiency of 20.84% with negligible hysteresis than the pristine device (16.56%). Furthermore, the Al-doped hole collectors showed 11% higher stability than the pristine device after 72 days of storage without encapsulation. Thus Al-doped NiOx can be a promising hole collector for highly efficient perovskite solar cells.

This work was partly supported by Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government (MOTIE) (20193091010160, Development of 3D eyed transparent inorganic photovoltaic module) and supported by National Research Foundation of Korea (NRF) grants funded by the Korean government (MSIT) (NRF- 2018R1C1B6008028, 2019K2A9A2A08000132).

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