Publication date: 4th October 2024
The electron blocking nature of the 2D ligands, such as phenethylammonium (PEA+) has shown to improve the performance of n-i-p structured perovskite solar cells,1 but conflicting results have been observed for p-i-n perovskite devices, leading to inconsistency.2,3 We find that to increase the device performance of p-i-n devices, the 2D phase on the perovskite surface should be eliminated through an annealing process. We find that the remaining PEA+ on the perovskite surface forms a dipole layer, resulting in excellent energy level alignment at the interface between the perovskite and the electron transport layer. As a result, solar cells with the p-i-n structure using a 1.67 eV wide-bandgap triple-cation perovskite show an enhanced power conversion efficiency of 20.61% and an open-circuit voltage (VOC) of 1.26 V, yielding a VOC deficit of only 410 mV, one of the lowest among the p-i-n wide-bandgap perovskite solar cells. Furthermore, PEA salts with different halides are used to prove the universality of the results of the 2D phase disappearance and the improvement of the device performance after annealing, showing that the type of halogen has little effect on the mechanism. Also, we demonstrate that this phenomenon is applicable to MAPbI3 perovskites and multi-cation perovskite compositions with and without MA+.
This work was supported by funding from the Energy Materials and Surface Sciences Unit of the Okinawa Institute of Science and Technology Graduate University, the OIST R&D Cluster Research Program, and the OIST Proof of Concept (POC) Program. Ackoledgements do to the JSPS KAKENHI under Grant Number JP21F21754 and the Alexander von Humboldt Foundation, the National Natural Science Foundation of China under Grant No. 62075006, the foundation from the China Scholarship Council, the Beijing Synchrotron Radiation Facility (BSRF-1W1A) and the scientists at BSRF-1W1A beamline, the OIST Micro/ Nanofabrication Section and Imaging Section, the support from the Global Institute of Future Technology of Shanghai Jiao Tong University.
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