Publication date: 5th November 2025
All-inorganic CsPbI₂Br perovskite solar cells suffer from interfacial defects and stress-induced instability that limit their performance. [1] Herein, we systematically investigate how annealing parameters—atmosphere, duration, and cooling rate—govern defect formation and stress evolution. Moderate air annealing promotes the formation of Pb–O bonds, effectively passivating surface Pb²⁺ defects and increasing the open-circuit voltage (VOC) to 1.31 V. [2], [3] However, excessive oxidation results in residual compressive stress, which accelerates structural degradation and performance loss during storage. By introducing a slow-cooling process, lattice relaxation is facilitated and the internal stress is reduced from 50.4 MPa to 31.1 MPa, resulting in devices with a power conversion efficiency of 15.3%, fill factor of 80.8%, and remarkable long-term stability, retaining over 95% of the initial efficiency after 600 hours. These findings highlight that a well-balanced combination of oxidation and thermal stress engineering is critical for achieving high-performance and stable CsPbI₂Br photovoltaics.
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