Defects and voids at the buried interface of perovskite films critically limit charge extraction and reproducibility in self-assembled monolayer (SAM)–based inverted perovskite solar cells (PSCs). In this work, we present a synergistic buried-interface engineering strategy that combines MACl additive regulation and PFN-Br interlayer modification to simultaneously enhance perovskite crystallization and interfacial energetics. Incorporating MACl promotes oriented crystal growth and suppresses interfacial strain, yielding compact films with reduced defect density.1,2 Complementarily, the introduction of an amphiphilic conjugated polyelectrolyte (PFN-Br) between the MeO-2PACz SAM and perovskite layers effectively covers uncovered ITO regions and mitigates interfacial void formation.3–5 Conductive AFM and cross-sectional SEM confirm the elimination of buried voids, while photoemission analyses reveal favorable interfacial band bending that facilitates charge separation and suppresses recombination. Consequently, the optimized devices achieve a stabilized power conversion efficiency of 22.5% with an exceptional fill factor of 0.84 and outstanding reproducibility (standard deviation < 0.01). This study highlights that fine-tuning buried interfaces through cooperative chemical passivation and energetic alignment is a key route toward scalable, stable, and high-performance SAM-based perovskite photovoltaics.