Publication date: 5th November 2025
This study focuses on improving the stability and fill factor limitations of current n-i-p structured perovskite solar cells. Conventional hole-transport materials (HTMs), such as 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD) and poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), often require dopants to enhance conductivity due to their intrinsically low charge mobility. However, the introduction of dopants or additives can negatively affect device performance and stability. Hydrophilic dopants may accelerate perovskite degradation through moisture penetration, while others can chemically corrode the perovskite layer or diffuse under bias or thermal stress, leading to interfacial accumulation and long-term instability. Moreover, carrier transport imbalance and interfacial recombination in n-i-p structures significantly restrict the fill factor.
To solve these issues, a series of donor-acceptor (D-A) copolymers were developed as dopant-free HTMs. A composite HTL composed of PBDT-DFQx-CT and MeO-2PACz was employed, and thermal treatment was used to promote the self-assembled monolayer (MeO-2PACz) to bond effectively with MoO3, improving molecular ordering and interface quality. The resulting FA0.97MA0.03Pb(I0.97Br0.03)3-based n-i-p perovskite solar cell achieved a power conversion efficiency of 21.3%, with an open-circuit voltage (Voc) of 1.07 V, short-circuit current density (Jsc) of 25.0 mA/cm2, and a fill factor (FF) of 79.3%. Furthermore, the device retained over 90% of its initial efficiency after 700 hours of storage, demonstrating remarkable operational stability. This work provides new insights into the design of dopant-free HTLs for efficient and stable n-i-p perovskite solar cells.
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