Publication date: 5th November 2025
In recent years, methods for non-destructive methods for sub-micrometer material identification have become more important for the characterization of energy materials and devices. One method that makes this possible is Scattering-type scanning near-field optical microscopy (s-SNOM), a purely optical microscopy method with sub-diffration spatial resoltuion[1].
This presentation will introduce the principles and challenges behind s-SNOM. It will discuss what practical details of instrumentation influence the performance and capabilities of such a microscope. In practice, imaging and spectroscopy experiments have been realized in the wavelength range from visible to THz enabling the study of a wide range of optical properties, such as but not limited to excitons, molecular vibrations, phonon and charge carrier signatures.[2]
Due to the sensitivity of s-SNOM to local dielectric properties carrier profiling can be conducted in the mid-IR and THz wavelength regime with high spatial resolution in 1D and 2D nanostructures. When utilizing synchronized laser setups these studies can also be carried out in pump-probe configurations to study the dynamic carrier behavior such as in classical semiconductor structures but also novel 2D materials. Study of collective phonon oscillations in crystalline materials enable the investigation of inorganic thin film materials for characterization but also investigation of nanoscale local changes induced by isotope enrichment.[2] The ability of s-SNOM to measure fingerprint IR spectroscopy with nanoscale resolution is showcased by the study of monolayer photo-polymerization[3]. Ultimately, the concept has been expanded as far as studying these systems in vivo liquid environments.[4]
Finally, this presentation will show how the method has been used to characterize perovskite and perovskite-based devices, using different spectral ranges and experimental conditions, such as inert gas solutions.[5-8]
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