Publication date: 5th November 2025
AgBiS2 has emerged as a promising, lead-free semiconductor for next-generation thin-film photovoltaics owing to its suitable band gap (0.9-1.0 eV), high absorption coefficient, and excellent environmental stability. In recent years, AgBiS2 nanocrystal (NCs) based solar cells have shown significant progress in device performance [1]; however, most reported fabrication routes rely on complex nanocrystal synthesis or a multistep ligand-exchange procedure that limits the scalability. To address these challenges, we developed a simple and cost-effective solution-processing method for fabricating AgBiS2 absorber layers directly from the precursor solution using a one-step deposition method [2]. Using this method, we confirmed the formation of a single-phase, highly crystalline AgBiS2 porous film without secondary impurities. Optical measurements revealed strong visible-light absorption with a band gap of 0.95 eV, while XPS provided insights into surface composition after its surface engineering. The AgBiS2 film of about 280 nm AgBiS2 integrated into SnO2/AgBiS2/P3HT heterojunction, achieved an efficiency of 6.3 % with a photocurrent density of 39.2 mA cm-2, representing the highest reported to date for AgBiS2 films prepared via a simple solution-based process. The devices exhibited a remarkable operational stability, retaining 6.8% efficiency after 40 min under maximum power point tracking. The external quantum efficiency spectrum reveals strong photoresponse from 300 to 1400 nm, with particularly high absorption in the near-infrared region. Additionally, device studies using SnO2 as an electron transport layer demonstrated efficient charge separation and a well-defined depletion region at the SnO2/AgBiS2 interface, supported by EBIC mapping. These results highlight the potential of AgBiS2 as a sustainable, solution-processable absorber for environmentally friendly solar cells, paving the way toward scalable optoelectronic technologies.
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