Mixed Ionic-Electronic Conduction and Electrochemical Doping in FAPbI3 Perovskite Solar Cells
Gerrit Boschloo a
a Department of Chemistry, Ångström Laboratory, Physical Chemistry, Uppsala University, Uppsala SE-751 20, Sweden
Invited Speaker, Gerrit Boschloo, presentation 006
Publication date: 22nd October 2026

Metal halide perovskite semiconductors display significant ionic conductivity and are therefore mixed ionic-electronic conductors. Electrochemical impedance spectroscopy was used to analyze both ionic and electronic conduction in FAPbI3 solar cells with the n-i-p configuration, under simple conditions: room temperature, darkness, 0 V applied potential. Significant ion conductivity (~ 10-8 S cm-1) is found, while electronic conductivity is orders of magnitude lower. This is explained by a high concentration of ionic defects (> 6*1017cm-3) and mutual charge compensation of these defects, leaving the perovskite intrinsic. In addition, energy barriers for charge injection from the contacts to the perovskite exist. The activation energy for ion conduction in FAPbI3 was determined to 0.26 eV. 

Upon application of forward potential beyond a certain limit, about 0.8 V, both conductivities increase dramatically, which is ascribed to electrochemical doping of the perovskite material.  Iodine vacancies are created in the perovskite near the hole-selective contact. This largely reversible process renders the perovskite semiconductor n-type doped.

This work was supported by the Swedish strategic research programme StandUp for Energy and the Horizon Europe framework program for research and innovation under grant agreement No. 101084124–DIAMOND.

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