Interface and Crystallization Engineering of Sn–Pb Perovskite Solar Cells: Towards HTL-Free Devices
Chieh-Ting Lin a
a Department of Chemical Engineering, National Chung Hsing University, Taichung, 40227, Taiwan
b Graduate Program in Semiconductor and Green Technology, Academy of Circular Economy, National Chung Hsing University, Nantou County 540, Taiwan
c Innovation and Development Center of Sustainable Agriculture, National Chung Hsing University, Taichung, 40227, Taiwan
Oral, Chieh-Ting Lin, presentation 026
Publication date: 22nd October 2026

Mixed tin–lead (Sn–Pb) perovskites are promising low-bandgap absorbers for tandem photovoltaics, but their performance and stability remain limited by Sn oxidation, non-radiative recombination, and heterogeneous crystallization. In this presentation, I will discuss our approaches to addressing these challenges through interface and crystallization engineering. Tuning the hole-contact interface, including PEDOT de-doping and the use of tailored organic materials, reduces interfacial losses in Sn–Pb perovskite solar cells. We further examine how fullerene-based additives and thermal processing influence buried interfaces, film formation, and device stability.1 Building on these findings, we explore hole-transport-layer-free (HTL-free) Sn–Pb devices as a route to a simpler device architecture. By controlling crystallization and the contact between the perovskite and the underlying electrode, our HTL-free cells achieve efficiencies exceeding 20%.2 These results show that careful control of film formation and interfacial properties can reduce reliance on a conventional HTL while retaining strong photovoltaic performance. Together, this work offers design principles for efficient Sn–Pb devices and their integration into tandem solar cells.

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